High-quality gallium nitride epitaxial wafer supplier —— It has 5 MOCVD epitaxial growth equipment and can directly provide GaN epitaxial materials for 2 - 8 inch microwave RF/power electronics applications, with an annual production capacity of 3,000 GaN epitaxial wafers. |
![]() | Silicon-based gallium nitride epitaxial wafers GaN-on-silicon 4 - 8 inch silicon-based gallium nitride epitaxial wafers, which can meet the application requirements of power electronics-grade RF power devices |
![]() | GaN epitaxial wafers with multiple substrates Multiple substrate Gan epitaxial wafers GaN epitaxial wafers with multiple types of substrates such as silicon carbide, sapphire, and GaN |
![]() | GaN power electronic devices GaN power electronic devices 650V~1200V, 10A - 40A gallium nitride power electronic devices. |
![]() | Synthetic diamonds GaN power electronic devices High - precision and high - purity synthetic diamonds, supporting various cutting methods and the IGI certificate for each diamond. |
![]() | Epitaxial wafer contract manufacturing and testing services GaN power electronic devices Provide testing and processing services for various wafers, chips, and epitaxial wafers |

Stable quality and outstanding performance
Epitaxial materialsExcellent technology
Excellent key indicators

Core technologies to enhance value
Possess multiple core technologies, obtain multiple authorized patents, and publish multiple public papers and high - level monographs

Comprehensive evaluation, through tests
Relying on the Wuhu Research Institute of Xidian University, a reliability testing platform for GaN power devices has been built, which has the ability to measure all parameters of GaN epitaxial wafers and power devices and evaluate the reliability in extreme environments.

Self-developed, updated and iterated
Integrate the training technology team. Through the design, manufacturing, updating and iteration of the gallium nitride epitaxial wafer structure, complete the design, development, performance debugging and finalization of gallium nitride products applied in the industrial grade.
