High-quality GaN epitaxial wafer supplier —— It has 5 MOCVD epitaxial growth equipments, which can directly provide 2~8 inch GaN epitaxial materials for microwave RF/power electronics applications, with an annual production capacity of 3,000 GaN epitaxial wafers. |
![]() | Silicon-based gallium nitride epitaxial wafer LASER CUTTING MACHINE With years of R&D and application experience in laser cutting machines, we can meet the cutting needs of different materials and thicknesses of sheet metal. |
![]() | Multiple substrate gallium nitride epitaxial wafers LASER CUTTING MACHINE Laser welding uses a high-energy density laser beam as a heat source to melt the surface of the material and then solidify it as a whole. |
![]() | GaN power electronic devices LASER CUTTING MACHINE When the thickness of the metal sheet exceeds 20mm, plasma cutting has more advantages over laser cutting and can meet the needs of different materials. |
Stable quality, outstanding performance
epitaxial materialtechnology reaches international advanced level
key indicators reach international leading level
Core technology, enhancing value
Possess a number of core technologies, obtain multiple authorized patents, and publish a number of public papers and high-level monographs
Thoroughly evaluated and tested
Relying on the Wuhu Research Institute of Xidian University, a GaN power device reliability test platform was built, which has the ability to conduct reliability assessment in extreme environments for measuring all parameters of GaN epitaxial wafers and power devices.
Independent research and development, updating and iteration
Integrating a training and technical team, completing the design, manufacturing, updating and iteration of gallium nitride epitaxial structures, and achieving the design, research and development, performance debugging, and finalization of industrial-grade gallium nitride products.
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